Development of Variable Affinity Barrier Photoemitter
نویسنده
چکیده
Cold cathode emission wa,H ubtaxncd for devices fabricated usinK Si SnO., heterojunctions. Due to excessive heating the devices failed before photo measurements could be made. Devices fabricated by "etching" silicon either single crystal or expitaxial. exhibited no electron emission. "tttmamamBsss^Mm: PRßCSDDC PAGE BL4NK-N0T FIIWED
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تاریخ انتشار 2013